2SA1201 transistor (pnp) features power dissipation p cm : 500 mw (tamb=25 ) collector current i cm : -800 ma collector-base voltage v (br)cbo : -120 v operating and storage junction temperature range t j , t stg : -55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo ic= -1 ma, i e =0 -120 v collector-emitter breakdown voltage v (br)ceo ic= -10 ma, i b =0 -120 v emitter-base breakdown voltage v (br)ebo i e = -1m a, i c =0 -5 v collector cut-off current i cbo v cb = -120 v, i e =0 -0.1 a emitter cut-off current i ebo v eb = -5 v, i c =0 -0.1 a dc current gain h fe(1) v ce = -5 v, i c = -100 ma 80 240 collector-emitter saturation voltage v ce(sat) i c = -500 ma, i b =-50ma -1 v base-emitter voltage v be v ce = -5 v, i c = -500 ma -1 v transition frequency f t v ce = -5 v, i c = -100 ma 120 mhz collector output capacitance c ob v cb = -10 v, i e =0, f= 1 mhz 30 pf classification of h fe(1) rank o y range 80-160 120-240 marking do dy sot-89 1. base 2. collector 3. emitter 1 2 3 2SA1201 http:// www.wej.cn e-mail:wej@yongerjia.com wej electronic co. r o hs wej electronic co.,ltd
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